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Institution:微电子学院

Title of Paper:A Model of channel current for uniaxially strained Si n-channel metal-oxide-semiconductor field-effect transistor

Journal:ACTA PHYSICA SINICA

First Author:Lu Yi; Zhang He-Ming; Hu Hui-Yong; Yang Jin-Yong; Yin Shu-Juan; Zhou Chun-Yu

Document Code:SCI WOS:000362977400032

Volume:64

Issue:19

ISSN:1000-3290

Translation or Not:No

Date of Publication:2015-01-01

Included Journals:SCI

Date:2018-06-08