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Institution:微电子学院

Title of Paper:Analytical threshold voltage model for strained silicon GAA-TFET

Journal:CHINESE PHYSICS B

First Author:Kang, Hai-Yan^Hu, Hui-Yong^Wang, Bin

Document Code:SCI WOS:000390376900094

Volume:25

Issue:11

ISSN:1674-1056

Translation or Not:No

Date of Publication:2016-01-01

Included Journals:SCI

Date:2018-06-08