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个人信息Personal Information
教授 博士生导师 硕士生导师
性别：男
毕业院校：西安电子科技大学
学历：博士研究生毕业
学位：博士研究生毕业
在职信息：在岗
所在单位：微电子学院
学科：微电子学与固体电子学
办公地点：东大楼511B
联系方式：
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- Song, Qingwen^Tang, Xiaoyan^Tian, Ruiyan^Zhang, Yimeng^Guo, Tao^Tang, Guannan^Yang, Shuai^Yuan, Hao^He, Yanjing,Investigation of the novel 4H-SiC trench MOSFET with non-uniform doping floating islands:SUPERLATTICES AND MICROSTRUCTURES,2016,99:62-66
- Song, Qingwen^Tang, Xiaoyan^Tian, Ruiyan^Zhang, Yimeng^Guo, Tao^Tang, Guannan^Yang, Shuai^Yuan, Hao^He, Yanjing,Investigation of the novel 4H-SiC trench MOSFET with non-uniform doping floating islands:SUPERLATTICES AND MICROSTRUCTURES,2016,99:62-66
- Song, Qingwen; Tang, Xiaoyan; Yuan, Hao; Han, Cha; Zhang, Yimen; Zhang, Yuming,Design, Simulation, and Fabrication of 4H-SiC Power SBDs With SIPOS FP Structure:IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY,2015,15(4):543-551
- Song, Qingwen^Yang, Shuai^Tang, Guannan^Han, Chao^Zhang, Yimeng^Tang, Xiaoyan^Zhang, Yimen^Zhang, Yuming,4H-SiC Trench MOSFET With L-Shaped Gate:IEEE ELECTRON DEVICE LETTERS,2016,37(4):463-466
- Song, Qingwen^Yang, Shuai^Tang, Guannan^Han, Chao^Zhang, Yimeng^Tang, Xiaoyan^Zhang, Yimen^Zhang, Yuming,4H-SiC Trench MOSFET With L-Shaped Gate:IEEE ELECTRON DEVICE LETTERS,2016,37(4):463-466
- Song Qingwen^Tang Xiaoyan^Zhang Yimeng^Zhang Yuming^Zhang Yimen,Investigation of SiC trench MOSFET with floating islands:IET POWER ELECTRONICS,2016,9(13):2492-2499
- Song Qingwen^Tang Xiaoyan^Zhang Yimeng^Zhang Yuming^Zhang Yimen,Investigation of SiC trench MOSFET with floating islands:IET POWER ELECTRONICS,2016,9(13):2492-2499
- Song QingWen; Yuan Hao; Han Chao; Zhang YuMing; Tang XiaoYan; Zhang YiMeng; Guo Hui; Zhang YiMen; Jia RenXu; Wang YueHu,Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current:SCIENCE CHINA-TECHNOLOGICAL SCIENCES,2015,58(8):1369-1374
- Song, Qing-Wen^Tang, Xiao-Yan^Yuan, Hao^Wang, Yue-Hu^Zhang, Yi-Meng^Guo, Hui^Jia, Ren-Xu^Lv, Hong-Liang^Zhang, Yi-Men^Zhang, Yu-Ming,Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power SBDs:CHINESE PHYSICS B,2016,25(4)
- Song, Qing-Wen^Tang, Xiao-Yan^He, Yan-Jing^Tang, Guan-Nan^Wang, Yue-Hu^Zhang, Yi-Meng^Guo, Hui^Jia, Ren-Xu^Lv, Hong-Liang^Zhang, Yi-Men^Zhang, Yu-Ming,Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors:CHINESE PHYSICS B,2016,25(3)