RnbgLTtFCrWEWSlYXvjg842d3qygYAQkNN3k94gGp6XlbR3K8A79SJ6wapbp
Current position: Home >> Scientific Research >> Patents

一种SOI应变SiGeBiCMOS集成器件及制备方法

Hits:

Title:一种SOI应变SiGeBiCMOS集成器件及制备方法

Institution:100900

Teaching and Research Group:1114

Scope of Patent:1

First Author:胡辉勇

Application Number:201210244289.2

Number of Inventors:8

Service Invention or Not:No

Application Date:2012-07-16

Date:2018-06-01

Next One:一种基于晶面选择的三应变SOISi基BiCMOS集成器件及制备方法