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Title:一种双多晶应变SiGe平面BiCMOS集成器件及制备方法

Institution:100900

Teaching and Research Group:1114

Scope of Patent:1

First Author:胡辉勇

Application Number:201210244287.3

Number of Inventors:8

Service Invention or Not:No

Application Date:2012-07-16

Date:2018-06-01