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个人信息Personal Information
副教授 硕士生导师
性别：男
毕业院校：西安电子科技大学
学历：博士研究生毕业
学位：博士研究生毕业
在职信息：在岗
所在单位：微电子学院
入职时间：2019-03-01
学科：微电子学与固体电子学
办公地点：西安电子科技大学宽禁带半导体国家工程中心403
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- 杨凌,张濛,宓珉瀚,武玫,朱青,卢阳,祝杰杰,周小伟,吕玲,马晓华,郝跃.Improved the C –V Curve Shift, Trap State Responsiveness, and Dynamic RON of SBDs by the Composite 2-D–3-D Channel Heterostructure Under the OFF-State Stress:IEEE TRANSACTIONS ON ELECTRON DEVICES
- 牛雪锐,张濛,张新创,芦浩,贾富春,杜佳乐,武玫,宋芳,王冲,郝跃.Analytical Model on the Threshold Voltage of p-Channel Heterostructure Field-Effect Transistors on a GaN-Based Complementary Circuit Platform.[J]:IEEE TRANSACTIONS ON ELECTRON DEVICES
- 牛雪锐,Yu-Shan Lin,朱青,Fong-Min Ciou,Kuan-Hsu Chen,陈怡霖,杜佳乐,武玫,张濛,王冲,张鼎张,郝跃.Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress:IEEE TRANSACTIONS ON ELECTRON DEVICES
- 芦浩,张濛,武玫,司泽艳,张新创,牛雪锐,郝跃.Improved RF Power Performance of AlGaN/GaN HEMT Using by Ti/Au/Al/Ni/Au Shallow Trench Etching Ohmic Contact:IEEE TRANSACTIONS ON ELECTRON DEVICES
- 芦浩,牛雪锐,司泽艳,张濛,武玫,宓珉瀚,朱青,程凯,郝跃.AlN/GaN/InGaN Coupling-Channel HEMTs for Improved gm and Gain Linearity:IEEE TRANSACTIONS ON ELECTRON DEVICES
- 侯斌,杨凌,祝杰杰,朱青,陈丽香,宓珉瀚,张濛,张恒爽,张鹏,周小伟.1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors with fT/fmax of 41/125 GHz:Applied Physics Express
- 侯斌,陈伟伟,祝杰杰,赵胜雷,陈永和,谢涌,张进成.Using in-process measurements of open-gate structures to evaluate threshold voltage of normally-off GaN-based high electron mobility transistors:APPLIED PHYSICS LETTERS
- 芦浩,杨凌,张濛,邓龙格,武玫,司泽艳,黄森,郝跃.High RF Performance GaN-on-Si HEMTs With Passivation Implanted Termination:IEEE ELECTRON DEVICE LETTERS
- 侯斌,祝杰杰,杨凌,陈伟伟,宓珉瀚,朱青,陈丽香,张蓉,张濛,周小伟.0.9-A/mm, 2.6-V Flash-Like Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique:IEEE ELECTRON DEVICE LETTERS
- 侯斌,宓珉瀚,张濛,易楚鹏,武玫,朱青,卢阳,祝杰杰,周小伟,吕玲,马晓华,郝跃.High linearity and high power performance with barrier layer of sandwich structure and Al0.05GaN back barrier for X-band application:JOURNAL OF PHYSICS D-APPLIED PHYSICS
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