Hits:

Title:基于AlN埋绝缘层的机械致单轴应变GeOI晶圆的制作方法

Institution:100900

Teaching and Research Group:1114

Scope of Patent:1

First Author:戴显英

Application Number:201110361523.5

Number of Inventors:9

Service Invention or Not:No

Application Date:2011-11-16

Authorization Date:2014-12-10

Date:2018-06-01