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Title:一种基于AlN埋绝缘层的晶圆级单轴应变SOI的制作方法

Institution:100900

Teaching and Research Group:1114

Scope of Patent:1

First Author:戴显英

Application Number:201110361513.1

Number of Inventors:8

Service Invention or Not:No

Application Date:2011-11-16

Authorization Date:2014-12-10

Date:2018-06-01