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Title:基于AlN埋绝缘层的机械致单轴应变GeOI晶圆的制作方法

Institution:微电子学院

Scope of Patent:国内

First Author:戴显英

Type of Patent:发明专利

Application Number:201110361523.5

Number of Inventors:9

Service Invention or Not:No

Application Date:2011-11-16

Authorization Date:2014-12-10

Date:2018-06-01