Hits:

Title:一种基于AlN埋绝缘层的晶圆级单轴应变SOI的制作方法

Institution:微电子学院

Scope of Patent:国内

First Author:戴显英

Type of Patent:发明专利

Application Number:201110361513.1

Number of Inventors:8

Service Invention or Not:No

Application Date:2011-11-16

Authorization Date:2014-12-10

Date:2018-06-01