唐中
|
个人信息Personal Information
教授 博士生导师 硕士生导师
性别：男
毕业院校：浙江大学
学历：博士研究生毕业
学位：博士研究生毕业
办公地点：西安电子科技大学杭州研究院
电子邮箱：
所在单位：杭州研究院
个人简介Personal Profile
唐中，教授，博导，杭州研究院常驻导师，先后于2015年和2020年本科和博士毕业于浙江大学，曾任荷兰代尔夫特理工大学博士后研究员，多年产业界工作经历，主要研究领域为模拟与数模混合集成电路设计、高性能传感器接口集成电路设计，如温度传感器、电流传感器、可重构传感器接口芯片、高精度模数转换器等。
国家自然科学基金青年科学基金项目（B类）获得者，研究成果发表于IEEE JSSC、IEEE ISSCC、IEEE TCAS-I等国际知名学术期刊和会议论文50余篇，包含第一/通讯作者的IEEE ISSCC、IEEE JSSC 10余篇。授权国家发明专利十余项。博士论文入选中国电子学会优秀博士论文奖 (2022)，以及第三期电子信息前沿青年学者出版工程。研究成果获得浙江省科技进步二等奖（R4），日内瓦国际发明展金奖（R1）。
2026年考研硕士还有名额 （卓越工程师学院长三角基地专项，招生专业领域：085403 集成电路工程），欢迎对模拟集成电路设计有热情的同学加入课题组。
最新科研进展：
课题组关于高精度Bandgap的研究成果入选ISSCC 2026!
代表性研究成果：
期刊 （JSSC）：
[1]. X. Wu, X. Yu, N. Nianxiong Tan and Z. Tang*, "A 14-b Energy-Efficient BW/Power Scalable CTDSM With a Frequency-Controlled Current Source," IEEE J. of Solid-State Circuits, doi: 10.1109/JSSC.2025.3621527 (Invited Paper, Early Access).
[2]. Z. Tang*, X. -P. Yu, K. A. A. Makinwa and N. N. Tan, "A 0.8-V BJT-Based Temperature Sensor With an Inaccuracy of ± 0.4 °C (3σ) From -40 °C to 125 °C in 22-nm CMOS", IEEE J. of Solid-State Circuits, vol. 60, no. 4, pp. 1190-1198, April 2025 (Invited Paper).
[3]. Z. Tang*, Y. Liu, P. Chen, H. Wang, X. Yu, K. A. A. Makinwa and N. N. Tan, "A 14-b BW/Power Scalable Sensor Interface With a Dynamic Bandgap Reference", IEEE J. Solid-State Circuits, vol. 59, no. 12, pp. 4077-4087, Dec. 2024 (Invited Paper).
[4]. Z. Tang*, S. Pan, M. Grubor and K. A. A. Makinwa, "A Sub-1 V Capacitively Biased BJT-Based Temperature Sensor With an Inaccuracy of ± 0.15 °C (3σ) From − 55 °C to 125 °C", IEEE J. Solid-State Circuits, vol. 58, no. 12, pp. 3433-3441, Dec. 2023 (Invited Paper).
[5]. Z. Tang*, Roger Zamparette, Yoshikazu Furuta, Tomohiro Nezuka, and Kofi A. A. Makinwa, "A Versatile ±25A Shunt-Based Current Sensor With ±0.25% Gain Error From −40 °C to 85 °C", IEEE J. Solid-State Circuits, vol. 57, no. 12, pp. 3716-3725, Dec. 2022 (Invited Paper).
[6]. Z. Tang, Y. Fang, Z. Shi, X. Yu, N. N. Tan and W. Pan, "A 1770-μm2 Leakage-Based Digital Temperature Sensor with Supply Sensitivity Suppression in 55-nm CMOS", IEEE J. Solid-State Circuits, vol. 55, no. 3, pp. 781-793, Mar. 2020.
会议（ISSCC）：
[1]. Z. Tang, S. Pan, X. Yu, N. N. Tan, Z. Zhu, “A 2.1-to-3.7ppm/°C Bandgap Voltage Reference with a Current-Domain TC Compensation and ±0.06% Inaccuracy from -40°C to 125°C in 130nm CMOS”, 2026 IEEE Int. Solid-State Circuits Conference (ISSCC, Accepted).
[2]. X. Wu, Y. Liu, X. Yu, N.N. Tan, Z.Tang*, “A Sub-1V 14b 5.8nW/Hz BW/Power Scalable CT Sensor Interface with a Frequency-Controlled Current Source Achieving a 225x Scalable Range", 2025 IEEE Int. Solid-State Circuits Conference (ISSCC).
[3]. Z. Tang, Y. Liu, P. Chen, H. Wang, X. Yu, K. A. A. Makinwa and N. N. Tan, “A 14b 98Hz-to-5.9kHz 1.7-to-50.8μW BW/Power Scalable Sensor Interface with a Dynamic Bandgap Reference and an Untrimmed Gain error of ±0.26% from -40°C to 125°C" , 2024 IEEE Int. Solid-State Circuits Conference (ISSCC).
[4]. Z. Tang, N. Toth, R. Zamparette, Y. Furuta, T. Nezuka, K.A.A. Makinwa, " A 40A Shunt-Based Current Sensor With ±0.2% Gain Error From –40°C to 125°C and Self-Calibration", 2023 IEEE Int. Solid-State Circuits Conference (ISSCC).
[5]. Z. Tang, S. Pan, K.A.A. Makinwa, “A Sub-1V 810nW Capacitively-Biased BJT-Based Temperature Sensor with an Inaccuracy of ±0.15°C (3σ) from -55 C to 125 °C", 2023 IEEE Int. Solid-State Circuits Conference (ISSCC).
[6]. Z. Tang, R. Zamparette, Y. Furuta, T. Nezuka, K.A.A. Makinwa, " A ±25A Versatile Shunt-based Current Sensor with 10kHz Bandwidth and ±0.25% Gain Error from −40 °C to 85 °C Using 2-Current Calibration", 2022 IEEE Int. Solid-State Circuits Conference (ISSCC).