当前位置:
- [1] Study of Mechanism and Testing Methodfor pH Sensing Using Open-Gate AlGaN/GaN High Electron Mobility Transistors
- [2] Enhancement-mode Al2O3/InAlN/AlN/GaN metal-insulator-semiconductor high-electron-mobility transistor with enhanced breakdown voltage using fluoride-based plasma treatment
- [3] Novel silicon-controlled rectifier (SCR) for digital and high-voltage ESD power supply clamp
- [4] Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors.CHINESE PHYSICS B.2015,24 (3) 2015-01-01
- [5] Investigation of trap states in Al2O3 InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors.CHINESE PHYSICS B.2015,24 (12) 2015-01-01
- [6] Investigation of trap states in Al<inf>2</inf>O<inf>3</inf>InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors.Chinese Physics B.2015,24 (12) 2015-01-01
共6条 1/1 首页上页下页尾页
