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Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors
发布时间：2018-06-08点击次数：
所属单位：先进材料与纳米科技学院
论文名称：Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors
发表刊物：CHINESE PHYSICS B
第一作者：Zhang Peng; Zhao Sheng-Lei; Hou Bin; Wang Chong; Zheng Xue-Feng; Ma Xiao-Hua; Zhang Jin-Cheng; Hao Yue
论文类型：Article
论文编号：SCI WOS:000351056400054
卷号：24
期号：3
ISSN号：1674-1056
是否译文：否
发表时间：2015-01-01
收录刊物：SCI
