Personal Information
Professor Supervisor of Doctorate Candidates Supervisor of Master's Candidates
Academic Titles:党委常委、副校长
Paper Publications
- Zhang, Weihang^Li, Xiangdong^Zhang, Jincheng^Jiang, Haiqing^Xu, Xin^Guo, Zhenxing^Jiang, Renyuan^Zou, Yu^He, Yunlong^Hao, Yue,Overcoming the poor crystal quality and DC characteristics of AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistors:PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2016,213(8):2203-2207
- Yang, Haifeng^Zhang, Jincheng^Zhang, Chunfu^Chang, Jingjing^Lin, Zhenhua^Chen, Dazheng^Sun, Xu^Xi, He^Han, Genquan^Hao, Yue,Effect of polyelectrolyte interlayer on efficiency and stability of p-i-n perovskite solar cells:SOLAR ENERGY,2016,139:190-198
- Zhu, Jiaduo^Zhang, Jincheng^Hao, Yue,Tunable schottky barrier in blue phosphorus-graphene heterojunction with normal strain:JAPANESE JOURNAL OF APPLIED PHYSICS,2016,55(8)
- Quan, Ru-Dai^Zhang, Jin-Cheng^Xu, Sheng-Rui^Xue, Jun-Shuai^Zhao, Yi^Ning, Jing^Lin, Zhi-Yu^Ren, Ze-Yang^Hao, Yue,Growth of InAlGaN Quaternary Alloys by Pulsed Metalorganic Chemical Vapor Deposition:CHINESE PHYSICS LETTERS,2016,33(4)
- Duan, Xiao-Ling^Zhang, Jin-Cheng^Xiao, Ming^Zhao, Yi^Ning, Jing^Hao, Yue,Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures:CHINESE PHYSICS B,2016,25(8)
- Quan, Ru-Dai^Zhang, Jin-Cheng^Zhang, Ya-Chao^Zhang, Wei-Hang^Ren, Ze-Yang^Hao, Yue,Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition:CHINESE PHYSICS LETTERS,2016,33(10)
- Quan, Ru-Dai^Zhang, Jin-Cheng^Xue, Jun-Shuai^Zhao, Yi^Ning, Jing^Lin, Zhi-Yu^Zhang, Ya-Chao^Ren, Ze-Yang^Hao, Yue,Fabrication of GaN-Based Heterostructures with an InAlGaN/AlGaN Composite Barrier:CHINESE PHYSICS LETTERS,2016,33(8)
- Xiao, Ming^Zhang, Jincheng^Duan, Xiaoling^Shan, Hengsheng^Yu, Ting^Ning, Jing^Hao, Yue,A partly-contacted epitaxial lateral overgrowth method applied to GaN material:SCIENTIFIC REPORTS,2016,6
- Zhang, Yachao; Zhou, Xiaowei; Xu, Shengrui; Wang, Zhizhe; Zhao, Yi; Zhang, Jinfeng; Chen, Dazheng; Zhang, Jincheng; Hao, Yue,Effects of interlayer growth condition on the transport properties of heterostructures with InGaN channel grown on sapphire by metal organic chemical vapor deposition:APPLIED PHYSICS LETTERS,2015,106(15)
- Zhang, Yachao; Zhou, Xiaowei; Xu, Shengrui; Wang, Zhizhe; Chen, Zhibin; Zhang, Jinfeng; Zhang, Jincheng; Hao, Yue,Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition:AIP ADVANCES,2015,5(12)
- Li, Xiangdong; Zhang, Weihang; Fu, Mengdi; Zhang, Jincheng; Jiang, Haiqing; Guo, Zhenxing; Zou, Yu; Jiang, Renyuan; Shi, ZuoChen; Hao, Yue,AlGaN channel MIS-HEMTs with a very high breakdown electric field and excellent high-temperature performance:IEICE ELECTRONICS EXPRESS,2015,12(20)
- Li Xiang-Dong; Zhang Jin-Cheng; Guo Zhen-Xing; Jiang Hai-Qing; Zou Yu; Zhang Wei-Hang; He Yun-Long; Jiang Ren-Yuan; Zhao Sheng-Lei; Hao Yue,Al0.30Ga0.70N/GaN/Al0.07Ga0.93N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050 mA/mm:CHINESE PHYSICS LETTERS,2015,32(11)
- Zhao Yi; Zhang Jin-Cheng; Xue Jun-Shuai; Zhou Xiao-Wei; Xu Sheng-Rui; Hao Yue,Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys:CHINESE PHYSICS B,2015,24(1)
- Li Xiang-Dong; Zhang Jin-Cheng; Zou Yu; Ma Xue-Zhi; Liu Chang; Zhang Wei-Hang; Wen Hui-Juan; Hao Yue,AlGaN Channel High Electron Mobility Transistors with an AlxGa1-xN/GaN Composite Buffer Layer:CHINESE PHYSICS LETTERS,2015,32(7)
- Zhao, Yi ; Xue, Junshuai ; Zhang, Jincheng ; Hao, Yue ,Superior carrier confinement in InAlN/InGaN/AlGaN double heterostructures grown by metal-organic chemical vapor deposition:Applied Physics Letters,2014,105(22)
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