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Title:MOSFET栅氧化层辐照位移损伤及影响的模拟方法

Institution:先进材料与纳米科技学院

Scope of Patent:国内

First Author:周益春

Type of Patent:Invent

Application Number:CN202411256917.8

Authorization Number:CN202411256917.8

Number of Inventors:5

Service Invention or Not:No

Application Date:2024-09-09

Date:2024-11-14