Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO(2)) Devices via Sol-Gel Method Stacking Tri-Layer HfO(2)/Al-ZnO/HfO(2) Structures.
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Title of Paper:Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO(2)) Devices via Sol-Gel Method Stacking Tri-Layer HfO(2)/Al-ZnO/HfO(2) Structures.
Journal:Nanomaterials (Basel, Switzerland)
Correspondence Author:周益春
Volume:13
Translation or Not:No
Date of Publication:2022-01-01
Date:2024-05-14