Robustly Stable Intermediate Memory States in Hfo2-based Ferroelectric Field-effect Transistors
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Title of Paper:Robustly Stable Intermediate Memory States in Hfo2-based Ferroelectric Field-effect Transistors
Journal:无机材料学学报（英文）
Correspondence Author:周益春
Volume:8
Issue:3
Page Number:685-692
Translation or Not:No
Date of Publication:2022-05-01
Date:2024-04-15