kA7vN2cUeQZlyY8sdcztKfFxbBuCRShxQ0TgCwP9BuBViERrfPdyNhrYyduH
Current position: Home >> Scientific Research >> Patents

一种混合晶面平面应变BiCMOS集成器件及制备方法

Hits:

Title:一种混合晶面平面应变BiCMOS集成器件及制备方法

Institution:100900

Teaching and Research Group:1114

Scope of Patent:1

First Author:张鹤鸣

Type of Patent:1

Application Number:201210244430.9

Number of Inventors:8

Service Invention or Not:No

Application Date:2012-07-16

Date:2018-06-01

Next One:一种基于三多晶SiGeHBT的混合晶面应变BiCMOS集成器件及制备方法