Hits:

Title:一种混合晶面垂直沟道应变BiCMOS集成器件及制备方法

Institution:100900

Teaching and Research Group:1114

Scope of Patent:1

First Author:张鹤鸣

Type of Patent:1

Application Number:201210244596

Number of Inventors:8

Service Invention or Not:No

Application Date:2012-07-16

Date:2018-06-01