Study of drain induced barrier lowering (DIBL) effect and subthreshold characteristics of fully-depleted Ge NMOS with P-substrate
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Institution:微电子学院
Title of Paper:Study of drain induced barrier lowering (DIBL) effect and subthreshold characteristics of fully-depleted Ge NMOS with P-substrate
Journal:SUPERLATTICES AND MICROSTRUCTURES
First Author:Liu, Xiangyu^Hu, Huiyong^Zhang, Heming^Wang, Bin^Yang, Jiayin^Han, Genquan
Document Code:SCI WOS:000391905300128
Volume:100
Page Number:1230-1237
ISSN:0749-6036
Translation or Not:No
Date of Publication:2016-01-01
Included Journals:SCI
Date:2018-06-08