袁嵩
-
副研究员
硕士生导师
- 性别：男
- 毕业院校：西安电子科技大学
- 学历：博士研究生毕业
- 学位：博士研究生毕业
- 在职信息：在岗
- 所在单位：广州研究院
- 学科：微电子学与固体电子学
- 电子邮箱：4f189df6851dfba8320855f75b46c9e042cb834a46ebdba4635373ab9385428b9bcc2093f268ff72e4bd44b1e8e688e15b7af52f0266db5f4f44b0e7afa0e5ab52fcfdaea9c085f97201ce01143eeefa8c1f32ff52c2f7a45894b7e710a88429c042c6aca5b873112106a77042a509bbae55c0b3d1bada11312709203576f58a
访问量：
-
[1]袁嵩,A Novel Igbt With Sipos Pillars Achieving Ultralow Power Loss in Tcad Simulation Study.[J]:Micromachines,2024,15(6)
-
[2]Analytical Model of Ldmos With a Double Step Buried Oxide Layer:Solid-state Electronics,2016,123:6-14
-
[3]New Al0.25ga0.75n/gan High Electron Mobility Transistor With Partial Etched Algan Layer:Superlattices And Microstructures,2016,93:303-307
-
[4]Analytical Model of Ldmos With a Single Step Buried Oxide Layer:Superlattices And Microstructures,2016,97:358-370
-
[5]刘启帆,江希,GONG,XIAOWU.Adaptive Soft Switching Asymmetrical Half Bridge Flyback Converter With Wider Voltage Range.[J]:IEEE Journal of Emerging and Selected Topics in Power Electronics,2025
-
[6]严兆恒,江希,GONG,XIAOWU.High Performance GaN PCT-SBD Temperature Sensors by Decreasing the Density of Nitrogen Vacancies in the AlGaN Layer.[J]:IEEE Sensors Journal,2025
-
[7]江希,GONG,XIAOWU.Understanding the role of dislocation defects of GaN HEMT under short-circuit stress through transient thermal characterization.[J]:IEEE Transactions on Power Electronics,2025
-
[8]Short-circuit Failure Modes And Mechanism Investigation of Ohmic-gate Gan Hemt.[J]:IEEE Transactions on Electron Devices,2024,71(3):1455-1463
-
[9]袁嵩,Analysis of the Operation Mechanism of Superjunction in Rc-igbt And a Novel Snapback-free Partial Schottky Collector Superjunction Rc-igbt..[J]:Micromachines,2023,15
-
[10]袁嵩,阶梯AlGaN外延新型Al_(0.25)Ga_(0.75)N/GaNHEMTs器件实验研究:物理学报,2015,64(23):7