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元磊
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Professor Supervisor of Doctorate Candidates Supervisor of Master's Candidates
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Paper Publications
Crystallographic Orientation-dependent Resistive Switching Devices Based on Hybrid Ga2o3 Thin Films:Advanced Composites And Hybrid Materials,2023,6(3)
High Temperature Reliability And Performance Evaluation of 1200 V Sic Mosfets:Journal of Crystal Growth,2023,606
Enhanced Responsivity of Beta-ga2o3 Ultraviolet Photodetector Using Pt/ito Stacked Electrode:Optoelectronics And Advanced Materials-rapid Communications,2020,14(11-12):494-500
Energy-band Alignment of (hfo2)(x)(al2o3)(1-x) Gate Dielectrics Deposited by Atomic Layer Deposition on Beta-ga2o3 (-201):Applied Surface Science,2018,433(Mar.1):530-534
Analytical Model And Structure of the Multilayer Enhancement-mode Beta-ga2o3 Planar Mosfets:IEEE Transactions on Electron Devices,2022,69(2):682-689
Influence of Metal Gate Electrodes on Electrical Properties of Atomic-layer-deposited Al-rich Hfalo/ga2o3 Moscaps:IEEE Transactions on Electron Devices,2020,67(4):1730-1736
Progress of Ultra-wide Bandgap Ga2o3 Semiconductor Materials in Power Mosfets:IEEE Transactions on Power Electronics,2020,35(5):5157-5179
Advancing understanding of structural, electronic, and magnetic properties in 3d-transition-metal TM-doped Alpha-Ga2O3 (TM = V, Cr, Mn, and Fe): A first-principles and Monte Carlo study:JOURNAL OF APPLIED PHYSICS,2023,134(22)
Analysis of Sic Npn Ultraviolet Phototransistor Under Ultrahigh Temperature:IEEE Transactions on Electron Devices,2023
Mg Ion Implantation And Post-annealing Effect on the Photoelectrical Performance of a Beta-ga2o3 Photodetector:Applied Optics,2023,62(15):3848-3854
A State-of-art Review on Gallium Oxide Field-effect Transistors:Journal of Physics D-applied Physics,2022,55(38)
Bidirectional Bias Response Ultraviolet Phototransistors With 4h-sic Npn Multi-layer Structure:IEEE Photonics Technology Letters,2022,34(2):81-84
Stress-induced Charge Trapping And Electrical Properties of Atomic-layer-deposited Hfalo/ga2o3 Metal-oxide-semiconductor Capacitors:Journal of Physics D-applied Physics,2019,52(21)
Three-Dimensional Design of a 4H-SiC NPN Lateral Phototransistor for Micro-Pixel in Ultraviolet Optoelectronic Integration:IEEE Transactions on Electron Devices,2023,70(12):6399-6405
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