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- Im provement of Subthreshold Characteristic of Gate-Recessed AlGaN/GaN Transistors by Using Dual-Gate Structure:IEEE Transactions on Electron Devices
- Enhanced g(m) and f(T) With High Johnson's Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge ,.[J]:IEEE Electron Device Letters
- High Channel Conductivity, Breakdown Field Strength, and Low Current Collapse in AlGaN/GaN/Si delta-Doped AlGaN/GaN:C HEMTs:EEE Transactions on Electron Devices
- High-Performance Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Combined With TiN-Based Source Contact Ledge and Two-Step Fluorine Treatment:IEEE Electron Device Letters
- Analysis of DC, Channel Temperature, and RF Performance of In Situ SiN/AlGaN-Sandwich-Barrier/GaN/Al₀.₀₅GaN HEMTs:IEEE Transactions on Electron Devices
- Improved the C-V Curve Shift, Trap State Responsiveness, and Dynamic RON of SBDs by the Composite 2-D–3-D Channel Heterostructure Under the OFF-State stress:IEEE Transactions on Electron Devices
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