Personal Information
Professor
Paper Publications
- Im provement of Subthreshold Characteristic of Gate-Recessed AlGaN/GaN Transistors by Using Dual-Gate Structure:IEEE Transactions on Electron Devices
- Enhanced g(m) and f(T) With High Johnson's Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge ,.[J]:IEEE Electron Device Letters
- High Channel Conductivity, Breakdown Field Strength, and Low Current Collapse in AlGaN/GaN/Si delta-Doped AlGaN/GaN:C HEMTs:EEE Transactions on Electron Devices
- High-Performance Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Combined With TiN-Based Source Contact Ledge and Two-Step Fluorine Treatment:IEEE Electron Device Letters
- Analysis of DC, Channel Temperature, and RF Performance of In Situ SiN/AlGaN-Sandwich-Barrier/GaN/Al₀.₀₅GaN HEMTs:IEEE Transactions on Electron Devices
- Improved the C-V Curve Shift, Trap State Responsiveness, and Dynamic RON of SBDs by the Composite 2-D–3-D Channel Heterostructure Under the OFF-State stress:IEEE Transactions on Electron Devices
- The Recessed Trapezoidal Groove Dual‐Gate AlGaN/GaN E‐Mode Transistor by Using Depletion Enhancement Effect:Physica Status Solidi (A) Applications and Materials
- High Performance Microwave Gate-recessed AlGaN/AlN/GaN MOS-HEMT With 73%Power-Added Efficiency,:IEEE Electron Device Letter
- Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor,:Chinese Physics B
- Reliability analysis of GaN-based light emitting diodes for solid state illumination:Chinese Physics B
- Degradation of AlGaN-GaN High Electron Mobility Transistors with Different AlGaN Layer Thicknesses under Strong Electric Field:Chinese Physics Letters
- High linearity and high power performance with barrier layer of sand and Al0.05GaN back barrier for X-band application structure:Journal of Physics D Applied Physics
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