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Multilevel oxygen-vacancy conductive filaments in beta-Ga2O3 based resistive random access memory

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Title of Paper:Multilevel oxygen-vacancy conductive filaments in beta-Ga2O3 based resistive random access memory

Journal:Physical Chemistry Chemical Physics

Indexed by:Article

Document Code:5975-5983

Document Type:J

Volume:23

Issue:10

Translation or Not:no

Date of Publication:2021-03-14

Included Journals:SCI

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