任泽阳，教授，陕西省青年拔尖人才，陕西省秦创原“科学家＋工程师”队伍首席科学家，小米青年学者。获2019年全国博新计划，2023年西安电子科技大学“华山学者”人才基金，2024年博士后优秀学术专著出版资助。主要研究方向包括金刚石生长CVD设备、金刚石材料生长与新型器件研究、金刚石与氮化镓集成研究等。目前已在APL, IEEE EDL, IEEE TED等国内外著名期刊上发表SCI检索论文50余篇，其中一作/通讯40余篇，授权国家发明专利20余项。主持国家自然科学基金青年基金和面上项目、陕西省自然科学基金青年项目、陕西省重点产业链项目、重点实验室基金、博士后科学基金等科研项目。国家重大科技专项专题负责人，山东省重点研发计划、国家重点研发计划青年项目参研单位负责人， 作为主要成员参与基金委重大科研仪器项目、国家重点研发计划等多个项目的研究工作。担任《电子学报》《人工晶体学报》和《Functional Diamond》等期刊青年编委。多次获得IEEE TED/EDL期刊“Golden Reviewer”荣誉。

学习经历：

2014-2018 西安电子科技大学  博士（导师：郝跃院士）

2010-2014 西安电子科技大学  本科

工作经历：

2025-至今  西安电子科技大学  教    授（破格）

2021-2025 西安电子科技大学  副教授

2023-2024 工业和信息化部产业发展促进中心 项目主管

2019-2023 西安电子科技大学  博士后（导师：包为民院士）

2019-2021 西安电子科技大学  讲   师

科研获奖：

2025年，2024年度陕西省科学技术奖  自然科学一等奖（第二完成人）

2025年，陕西高等学校科学技术研究优秀成果  技术发明特等奖（第二完成人）

2023年，陕西省电子学会科学技术奖  自然科学一等奖（第二完成人）

2023年，陕西高校青年创新团队

其他获奖：

2025年，第三届全国博士后创新创业大赛  银奖  （团队负责人）

2022年，陕西省科技工作者创新创业大赛 二等奖（团队负责人）

2022年，陕西省创新创业优秀博士后

2022年，第一届陕西省博士后创新创业大赛 铜奖（团队负责人）

发表主要学术论文：

[38] Zeyang Ren, Chaoyue Wang, Jinfeng Zhang*, Zihui Zhu, Kai Su, Weidong Man, Yu Fu, Junfei Chen, Junpeng Li, Weidong Zhu, Yue Hao, Jincheng Zhang*, Expansion growth of<110>-oriented single crystal diamond,  Applied Surface Science, 2025, 703, 163439.

[37] Yu Fu, Zeyang Ren*, Kai Su, Jinfeng Zhang*, Ruowei Liu, Yijiang Li, Liaoliang Zhu, Jintao Meng, Peng Qian, Dong Wang, Yue Hao, Hiroshi Kawarada, Jincheng Zhang*, Integration of Oxidized Silicon- and Hydrogen-Terminated Diamond p-Channels for Normally-Off High-Voltage Diamond Power Devices, IEEE Electron Device Letters, 2025, 46(3), 330-333. 

[36] Yuanchen Ma, Qi He, Jinfeng Zhang*, Zihui Zhu, Zeyang Ren*, Kai Su, Xinxin Yu, Qihui Xu, Jincheng Zhang*, Yue Hao, Electrical properties of normally-on hydrogenated Si-terminated diamond field effect transistors, Materials Science in Semiconductor Processing, 2025, 192, 109426.

[35] 任泽阳, 宋松原, 张涛*, 陈鹤元, 李姚, 张金风, 李俊鹏, 陈军飞, 朱卫东, 郝跃, 张进成*, 纳米晶金刚石钝化GaN基横向二极管制备与性能研究, 物理学报, 2025.

[34] Yu Fu, Songyuan Song, Zeyang Ren*, Liaoliang Zhu, Jinfeng Zhang*, Kai Su, Junfei Chen, Tao Zhang, Weidong Zhu, Junpeng Li, Weidong Man, Yue Hao, Jincheng Zhang*, Preparation and Characterization of GaN-on-Si HEMTs with Nanocrystalline Diamond Passivation, Crystals, 2025, 15(3), 242.

[33] 李逸江, 宋松原, 任泽阳*, 祝子辉, 张金风, 苏凯, 张进成, 马源辰, 郝跃, 金刚石硼掺杂准垂直肖特基二极管特性研究, 真空电子技术, 2024, (05), 64-70. 

[32] 马源辰, 任泽阳*, 李逸江, 张金风, 许琦辉, 苏凯, 张进成, 郝跃. 金刚石SBD及RF-DC电路应用研究, 固体电子学研究与进展, 2024, 44(6), 547-551.

[31] Senchuan Ding, Jinfeng Zhang*, Kai Su*, Zeyang Ren*, Junfei Chen, Zhiqing Yang, Jincheng Zhang, Yue Hao, Single-crystal diamond grown through high-power-density epitaxy used for a high-performance radiation detector, Science China Materials, 2024, 67(7), 2329-2334.

[30] Qi He, Jinfeng Zhang*, Zihui Zhu, Zeyang Ren*, Xinxin Yu, Jincheng Zhang*, Kai Su, Yijiang Li, Qihui Xu, Junpeng Li, Yue Hao, Preparation of High Conductivity Hydrogenated Silicon-Doped Diamond and MOSFET, IEEE Transactions on Electron Devices, 2024, 71(4), 2329-2334.

[29] Zihui Zhu, Zeyang Ren*, Yijiang Li, Jinfeng Zhang*, Jincheng Zhang, Kai Su, Liaoliang Zhu, Jintao Meng, Junfei Chen, Yue Hao, Boron-Doped Diamond MOSFETs With Gradual Channel Doping Density, IEEE Electron Device Letters, 2024, 45(10), 1694-1697.

[28] Junpeng Li, Zeyang Ren*, Jinfeng Zhang*, Jincheng Zhang, Kai Su, Jintao Meng, Liaoliang Zhu, Yijiang Li, Junfei Chen, Hanxue Wang, Yue Hao, Research on the epitaxial direction control and mechanism of polycrystalline diamond grains, Functional Diamond, 2024, 4(1), 2346083.

[27] Jinfeng Zhang*, Qi He, Zeyang Ren*, Xinxin Yu, Kai Su, Yijiang Li, Qihui Xu, Jincheng Zhang*, Yue Hao, High Conductivity Hydrogenated Boron and Silicon Co-Doped Diamond With 0.46 Ω·mm Ohmic Contact Resistance, IEEE Electron Device Letters, 2024, 45(1), 48-51.

[26] Junpeng Li, Zeyang Ren*, Jinfeng Zhang*, Hanxue Wang, Yuanchen Ma, Yifan Fei, Siyuan Huang, Senchuan Ding, Jincheng Zhang, Yue Hao, Formation mechanism and regulation of silicon vacancy centers in polycrystalline diamond films, Acta Phys. Sin., 2023, 72(3), 038102.

[25] Zeyang Ren, Yuanchen Ma, Shiqi Yang, Xinxin Yu*, Jinfeng Zhang*, Kai Su, Jincheng Zhang*, Hanxue Wang, Yue Hao, High frequency single crystalline diamond MOSFET with high temperature (300 °C) ALD grown Al2O3dielectric, Results in Physics, 2023, 49, 106517.

[24] Yuanchen Ma, Zeyang Ren*, Shiqi Yang, Kai Su, Jinfeng Zhang*, Xiaoli Yang, Xiuxiu Ning, Jincheng Zhang, Yue Hao, High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric, Functional Diamond, 2023, 3(1), 2219687.

[23] Yufei Xing, Zeyang Ren*, Jinfeng Zhang, Kai Su, Senchuan Ding, Qi He, Jincheng Zhang, Chunfu Zhang, Yue Hao, Characteristics of hydrogen terminated single crystalline diamond logic inverter, Acta Phys. Sin., 2022, 71(8), 088102.

[22] Senchuan Ding, Zeyang Ren*, Yufei Xing, Jinfeng Zhang*, Yuanchen Ma, Kai Su, Junpeng Li, Hanxue Wang, Jincheng Zhang, Yue Hao, Single Crystalline Diamond p-Channel Cascode and Inverter, IEEE Transactions on Electron Devices, 2022, 69(11), 6471-6475.

[21] Qi He, Zeyang Ren*, Yufei Xing, Jinfeng Zhang*, Kai Su, Jincheng Zhang*, Yue Hao, Diamond inverter consisted of high mobility and low on-resistance enhancement-mode C–H diamond MISFET, Diamond & Related Materials, 2022, 125, 109003.

[20] Zeyang Ren, Senchuan Ding, Zhenfang Liang, Qi He, Kai Su, Jinfeng Zhang*, Jincheng Zhang*, Chunfu Zhang, Yue Hao, Diamond MOSFET with MoO3/Si3N4 doubly stacked gate dielectric, Appl. Phys. Lett., 2022; 120, 042104.

[19] Zeyang Ren, Zhenfang Liang, Kai Su, Yufei Xing, Jinfeng Zhang*, Jincheng Zhang, Chunfu Zhang, Yue Hao, Polycrystalline diamond normally-off MESFET passivated by a MoO3 layer, Results in Physics, 2021, 20, 103760.

[18] Ao Cui, Jinfeng Zhang*, Zeyang Ren*, Hong Zhou, Dong Wang, Yong Wu, Yingyi Lei, Jincheng Zhang, Yue Hao, Microwave power performance analysis of hydrogen terminated diamond MOSFET, Diamond & Related Materials, 2021, 118, 108538.

[17] Zeyang Ren, Yufei Xing, Dandan Lv, Jiamin Xu, Jinfeng Zhang*, Jincheng Zhang*, Kai Su, Chunfu Zhang, Hong Zhang, Qi He, Yue Hao, H-diamond MOS interface properties and FET characteristics with high-temperature ALD-grown HfO2 dielectric, AIP Advances, 2021, 11, 035041.

[16] Jinfeng Zhang, Jiamin Xu, Zeyang Ren*, Qi He, Shengrui Xu, Chunfu Zhang, Jincheng Zhang, Yue Hao, Characteristics of hydrogen-terminated single crystalline diamond field effect transistors with different surface orientations, Acta Phys. Sin., 2020, 69(2), 028101.

[15] Kai Su, Zeyang Ren, Yue Peng, Jinfeng Zhang*, Jincheng Zhang*, Yachao Zhang, Qi He, Chunfu Zhang, Yue Hao, Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrO2/Al2O3 Gate Dielectrics, IEEE Access, 2020, 8, 20043-20050.

[14] Zeyang Ren, Qi He, Jiamin Xu, Guansheng Yuan, Jinfeng Zhang*, Jincheng Zhang*, Kai Su, Yue Hao, Low On-Resistance H-Diamond MOSFETs With 300℃ ALD-Al2O3 Gate Dielectric, IEEE Access, 2020, 8, 50465-50471.

[13] Zeyang Ren, Dandan Lv, Jiamin Xu, Jinfeng Zhang*, Jincheng Zhang*, Kai Su, Chunfu Zhang, Yue Hao, High temperature (300 ℃) ALD grown Al2O3 on hydrogen terminated diamond: Band offset and electrical properties of the MOSFETs, Applied Physics Letters, 2020, 116, 013503.

[12] Zeyang Ren, Dandan Lv, Jiamin Xu, Kai Su, Jinfeng Zhang*, Dong Wang, Yong Wu, Jincheng Zhang*, Yue Hao, Performance of H-diamond MOSFETs with high temperature ALD grown HfO₂ dielectric, Diamond & Related Materials, 2020, 106, 107846.

[11] Jinfeng Zhang, Jun Liu, Qi He, Zeyang Ren*, Kai Su, Jincheng Zhang, Yue Hao, Hydrogen terminated diamond diode with high breakdown voltage, Proc. SPIE, 2020, 11455, 114556Y.

[10] Jinfeng Zhang*, Wanjiao Chen, Zeyang Ren*, Kai Su, Pengzhi Yang, Zhuangzhuang Hu, Jincheng Zhang, Yue Hao, Characterization and Mobility Analysis of Normally off Hydrogen-Terminated Diamond Metal–Oxide–Semiconductor Field-Effect Transistors, Phys. Status Solidi A, 2020, 217, 1900462.

[9] Zeyang Ren, Wanjiao Chen, Jinfeng Zhang*, Jincheng Zhang*, Chunfu Zhang, Guansheng Yuan, Kai Su, Zhiyu Lin, Yue Hao, High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors, IEEE Journal of the Electron Devices Society, 2019, 7, 82–87.

[8] Zeyang Ren, Jun Liu, Kai Su, Jinfeng Zhang*, Jincheng Zhan, Shengrui Xu, Yue Hao, Multiple enlarged growth of single crystal diamond by MPCVD with PCD-rimless top surface, Chin. Phys. B, 2019, 28(12), 128103.

[7] Zeyang Ren, Jinfeng Zhang*, Jincheng Zhang*, Chunfu Zhang, Pengzhi Yang, Dazheng Chen, Yao Li, Yue Hao, Research on the hydrogen terminated single crystal diamond MOSFET with MoO₃ dielectric and gold gate metal, Journal of Semiconductors, 2018, 39(7), 074003.

[6] Zeyang Ren, Jinfeng Zhang*, Jincheng Zhang*, Shengrui Xu, Chunfu Zhang, Kai Su, Yao Li, Yue Hao, Growth and Characterization of the Laterally Enlarged Single Crystal Diamond Grown by Microwave Plasma Chemical Vapor Deposition, Chin. Phys. Lett., 2018, 35(7), 078101.

[5] Zeyang Ren, Guansheng Yuan, Jinfeng Zhang*, Lei Xu, Jincheng Zhang*, Wanjiao Chen, Yue Hao, Hydrogen-terminated polycrystalline diamond MOSFETs with Al2O3 passivation layers grown by atomic layer deposition at different temperatures, AIP Advances, 2018, 8(6), 065026.

[4] Zeyang Ren, Jinfeng Zhang*, Jincheng Zhang, Shengrui Xu, Chunfu Zhang, Rudai Quan, Yue Hao, Characteristics of H-terminated single crystalline diamond field effect transistors, Acta Phys. Sin., 2017, 66(20), 208101.

[3] Zeyang Ren, Jinfeng Zhang*, Jincheng Zhang*, Chunfu Zhang, Dazheng Chen, Pengzhi Yang, Yao Li,Yue Hao, Polycrystalline Diamond MOSFET With MoO3 Gate Dielectric and Passivation Layer, IEEE Electron Device Letters, 2017, 38(9), 1302-1304.

[2] Zeyang Ren, Jinfeng Zhang*, Jincheng Zhang*, Chunfu Zhang, Shengrui Xu, Yao Li, Yue Hao, Diamond Field Effect Transistors With MoO3 Gate Dielectric, IEEE Electron Device Letters, 2017, 38(6), 786-789.

[1] Zeyang Ren, Jinfeng Zhang*, Jincheng Zhang*, Chunfu Zhang, Dazheng Chen, Rudai Quan, Jiayin Yang, Zhiyu Lin, Yue Hao, Polycrystalline diamond RF MOSFET with MoO3 gate dielectric, AIP Advances, 2017, 7(12), 125302.