教育与工作经历

陆小力教授本科毕业于中国科学技术大学(2002)，于2007年获得凝聚态物理博士学位；先后在新加坡南洋理工大学(2008)，美国国家标准技术研究院(2009)，和德国马普微结构物理所(2010-2011) 从事博士后研究。目前为西安电子科技大学微电子学院教授，博士生导师；担任宽禁带半导体国家工程研究中心研发主管副主任，教育部学位中心、国家自然基金委评审专家，某部委重大优先主题专家组专家，亚洲氧化镓联盟技术专家委员会委员，学术期刊InfoMat，InfoScience，《半导体技术》青年编委，Nanomaterials客座编辑。主要研究方向为光电融合的脉冲功率组件与系统设计和面向AI数据中心的高功率、高能效服务器电源设计与器件工艺开发。近五年在包括Applied Physics Letters、Applied Surface Science等1类贡献度期刊发表论文44篇（通讯作者论文11篇），被引超过500次，单篇最高引用68次。受邀担任IEEE Electron Device Letters, Advanced Materials, Nanotechnology等多个国际刊物审稿人。获得“安徽省优秀博士论文奖”（2009），“德国洪堡基金会洪堡学者”（2011）；“科技创新团队奖”（2023）；“中国电子科技集团公司奖教金一等奖”（2023）。先后主持国家自然科学基金项目3项，科技委项目3项。

代表论文列表

1.   Lu, X.*; Kim, Y.; Goetze, S.; Li, X.; Dong, S.; Werner, P.; Alexe, M.; Hesse, D. Magnetoelectric Coupling in Ordered Arrays of Multilayered Heteroepitaxial BaTiO3/CoFe2O4 Nanodots. Nano Lett. 2011, 11 (8), 3202–3206. https://doi.org/10.1021/nl201443h. 

2.   Lu, X.*; Dong, S.; Li, X.; Alexe, M.; Hesse, D.; Hao, Y. Field Dependency of Magnetoelectric Coupling in Multilayered Nanocomposite Arrays: Possible Contribution from Surface Spins. Appl Phys Lett. 2012, 101 (22). https://doi.org/10.1063/1.4768290. 

3.   Stratulat, S.; Lu, X.; Morelli, A.; Hesse, D.; Erfurth, W.; Alexe, M. Nucleation-Induced Self-Assembly of Multiferroic BiFeO3-CoFe2O4 Nanocomposites. Nano Lett. 2013, 13 (8), 3884–3889. https://doi.org/10.1021/nl401965z. 

4.   Kim, Y.; Lu, X.; Jesse, S.; Hesse, D.; Alexe, M.; Kalinin, S. Universality of Polarization Switching Dynamics in Ferroelectric Capacitors Revealed by 5D Piezoresponse Force Microscopy.Adv Funct. Mat. 2013, 23 (32), 3971–3979. https://doi.org/10.1002/adfm.201300079. 

5.   Lu, X.*; Zhang, J.; Zhang, C.; Zhang, J.; Hao, Y. Highly Ordered Core-Shell CoFe2O4-BiFeO3 Nanocomposite Arrays from Dimension Confined Phase Separation and Their Interfacial Magnetoelectric Coupling Properties. RSC ADVANCES 2015, 5 (72), 58640–58643. https://doi.org/10.1039/c5ra05106a. 

6.   Kim, S.; Seol, D.; Lu, X.*; Alexe, M.; Kim, Y. Electrostatic-Free Piezoresponse Force Microscopy. Scientific Reports 2017, 7 (1), 41657. https://doi.org/10.1038/srep41657. 

7.   Zhang, Y.; Shen, L.; Liu, M.; Li, X.; Lu, X.*; Lu, L.; Ma, C.; You, C.; Chen, A.; Huang, C.; Chen, L.; Alexe, M.; Jia, C. Flexible Quasi-Two-Dimensional CoFe2O4 Epitaxial Thin Films for Continuous Strain Tuning of Magnetic Properties. ACS Nano 2017, 11 (8), 8002–8009. https://doi.org/10.1021/acsnano.7b02637. 

8.   Ievlev, A.; Santosh, K.; Vasudevan, R.; Kim, Y.; Lu, X.; Alexe, M.; Cooper, V.; Kalinirr, S.; Ovchinnikova, O. Non-Conventional Mechanism of Ferroelectric Fatigue via Cation Migration. NATURE Comm. 2019, 10. https://doi.org/10.1038/s41467-019-11089-w. 

9.   Chen, L.; Wang, H.; Hou, B.; Liu, M.; Shen, L.; Lu, X.*; Ma, X.; Hao, Y. Hetero-Integration of Quasi Two-Dimensional PbZr0.2Ti0.8O3 on AlGaN/GaN HEMT and Non-Volatile Modulation of Two-Dimensional Electron Gas. Appl Phys Lett. 2019, 115 (19). https://doi.org/10.1063/1.5123192. 

10. Wang, D.; Li, J.; Jiao, A.; Zhang, X.; Lu, X.*; Ma, X.; Hao, Y. Atomically Control of Surface Morphology in Ga2O3 Epi-Layers with High Doping Activation Ratio. JOURNAL OF ALLOYS AND COMPOUNDS 2021, 855. https://doi.org/10.1016/j.jallcom.2020.157296. 

11. Wang, T.; Dong, S.; Xiao, Z.; Li, C.; Yue, W.; Liang, B.; Xu, F.; Wang, Y.; Xu, S.; Lu, X.*; Li, J.; Wang, C.; Yuan, Z.; Li, S.; Sun, G.; Liu, B.; Lu, H.; Wang, H.; Kwok, W. Interface Roughness Governed Negative Magnetoresistances in Two-Dimensional Electron Gases in AlGaN/GaN Heterostructures. PHYSICAL REVIEW MATERIALS 2021, 5 (6). https://doi.org/10.1103/PhysRevMaterials.5.064003. 

12. Tang, X.; Lu, X.*; Cong, Z.; Shi, Z.; Wang, D.; Li, J.; Ma, X.; Hao, Y. Ferroelectric Domain Modulated AlGaN/GaN Field Effect Transistor. APPLIED PHYSICS LETTERS 2022, 120 (3). https://doi.org/10.1063/5.0076925. 

13. Shi, Z.; Lu, X.*; Tang, X.; Wang, D.; Cong, Z.; Ma, X.; Hao, Y. Stress Enhanced Photoelectric Response in Flexible AlN Single-Crystalline Thin Films. APPLIED SURFACE SCIENCE 2022, 585. https://doi.org/10.1016/j.apsusc.2021.152378. 

14. Cong, Z.; Lu, X.*; Tang, X.; Li, J.; Shi, Z.; Wang, D.; He, Y.; Ma, X.; Hao, Y. Ferroelectric Domain Induced Giant Enhancement of Two-Dimensional Electron Gas Density in Ultrathin-Barrier AlGaN/GaN Heterostructures. APPLIED SURFACE SCIENCE 2022, 586. https://doi.org/10.1016/j.apsusc.2022.152772. 

15. Wang, D.; Lu, X.*; Ding, X.; Zhao, Y.; Gou, G.; Shi, Z.; Zhang, Z.; Li, J.; Cong, Z.; Ma, X.; Hao, Y. Elastic Strain Modulation of Energy Bandgap in Beta-Ga2O3 Sheet: Experimental and Computational Investigations. MATERIALS TODAY PHYSICS 2022, 25. https://doi.org/10.1016/j.mtphys.2022.100697. 

16. Liu, H.; Li, J.; Lv, Y.; Wang, Y.; Lu, X.*; Dun, S.; Han, T.; Guo, H.; Bu, A.; Ma, X.; Feng, Z.; Hao, Y. Improved Electrical Performance of Lateral β-Ga2O3 MOSFETs Utilizing Slanted Fin Channel Structure. APPLIED PHYSICS LETTERS 2022, 121 (20), 202101. https://doi.org/10.1063/5.0119694. 

17. Wang, X.; Lu, X.*; He, Y.; Liu, P.; Shao, Y.; Li, J.; Yang, Y.; Li, Y.; Hao, Y.; Ma, X. An E-Mode β-Ga2O3 Metal-Heterojunction Composite Field Effect Transistor with a Record High P-FOM of 0.73 GW/Cm ². In 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD); IEEE: Hong Kong, 2023; pp 390–393. https://doi.org/10.1109/ISPSD57135.2023.10147570. 

18. Cong, Z.; Lu, X.*; He, Y.; Cai, M.; Wang, X.; Wang, Y.; Ma, X.; Hao, Y. Ferroelectric Passivation Layer Derived High Performance AlGaN/GaN Heterojunction Field-Effect Transistor. APPLIED PHYSICS LETTERS 2023, 123 (21), 212104. https://doi.org/10.1063/5.0162453. 

19. Li, Y.; Yang, Y.; He, Y.; Lv, Y.; Wang, Y.; Lu, X.*; Ma, X.; Hao, Y. Electro-Thermal Co-Design β-Ga ₂ O ₃ MOS-Type Trench Diode Based on Optimized Trench-Sidewall Interface Quality Strategy and Mechanism Study. IEEE J. Emerg. Sel. Topics Power Electron. 2024, 1–1. https://doi.org/10.1109/JESTPE.2024.3402969.