Gate Voltage- And Bias Voltage-tunable Staggered-gap to Broken-gap Transition Based on Wse(2)/ta(2)nise(5) Heterostructure For Multimode Optoelectronic Logic Gate.
Release Time:2024-11-08 Hits:
- Journal:Acs Nano
- Correspondence Author:李晓波
- Volume:18
- Issue:17
- Page Number:11462-11473
- Translation or Not:No
- Date of Publication:2024-01-01