Personal Information:
Associate professor graduate teacher
Paper Publications
- [1]重离子辐射对AlGaN/GaN 高电子迁移率晶体管低频噪声特性的影响.物理学报.2024,73:036103
- [2]A Thorough Study on the Effect of 3-mev Proton Irradiation on the Performance of Algan/gan Hemts.IEEE Transactions on Electron Devices.2024,71(12):7319-7325
- [3]Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions.Micromachines.2024,15(8)
- [4]基于锗硅异质结双极晶体管的低噪声放大器及其反模结构的单粒子瞬态数值仿真研究.物理学报.2024,73(12):288-299
- [5]Gamma-irradiation-accelerated Degradation in Algan-based Uvc Leds Under Electrical Stress.IEEE Transactions on Nuclear Science.2021,68(2):149-155
- [6]Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor.Micromachines.2023,14(10)
- [7]吕玲.Effect of heavy ion irradiation on the interface traps of AlGaN/GaN High Electron Mobility Transistors.Chinese Physics B.2022,31:036103
- [8]吕玲.增强型AlGaN/GaN MIS-HEMTs器件的质子辐照效应.现代应用物理.2021,12(2):020601
- [9]A novel AlGaN/GaN Schottky barrier diode with partial p-AlGaN cap layer and recessed dual-metal anode for high breakdown and low turn-on voltage.Semiconductor Science and Technology.2020,35:015018-9
- [10]Degradation mechanisms of InGaN/GaN UVA LEDs under swift heavy ion irradiation: role of defects.Semiconductor Science and Technology.2021,36(9):095044