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吕玲
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Associate professor graduate teacher
Paper Publications
[1]吕玲.Effect of heavy ion irradiation on the interface traps of AlGaN/GaN High Electron Mobility Transistors.Chinese Physics B.2022,31:036103
[2]吕玲.增强型AlGaN/GaN MIS-HEMTs器件的质子辐照效应.现代应用物理.2021,12(2):020601
[3]A novel AlGaN/GaN Schottky barrier diode with partial p-AlGaN cap layer and recessed dual-metal anode for high breakdown and low turn-on voltage.Semiconductor Science and Technology.2020,35:015018-9
[4]Degradation mechanisms of InGaN/GaN UVA LEDs under swift heavy ion irradiation: role of defects.Semiconductor Science and Technology.2021,36(9):095044
[5]Significant Degradation of AlGaN/GaN High Electron Mobility Transistors with Fast and Thermal Neutron Irradiation.IEEE Transactions on Nuclear Science.2019
[6]Fast and Thermal Neutron Radiation Effects on GaN PIN Diodes.2017
[7]Theoretical analysis of proton irradiation effects on AlGaN/GaN high-electron-mobility transistors.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B.2015,33(5)
[8]Proton Irradiation Effects on AlGaN/AlN/GaN Heterojunctions.IEEE TRANSACTIONS ON NUCLEAR SCIENCE.2015,62(1):300-305
[9]Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors.Microelectronics Reliability
[10]Neutron irradiation effects on AlGaN/GaN high electron mobility transistors.Chinese Physics B
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