Personal Information
副教授 Supervisor of Master's Candidates
Paper Publications
- A Thorough Study on the Effect of 3-mev Proton Irradiation on the Performance of Algan/gan Hemts:IEEE Transactions on Electron Devices,2024,71(12):7319-7325
- Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor:Micromachines,2023,14(10)
- 重离子辐射对AlGaN/GaN 高电子迁移率晶体管低频噪声特性的影响.[J]:物理学报,2024,73:036103
- Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions:Micromachines,2024,15(8)
- 基于锗硅异质结双极晶体管的低噪声放大器及其反模结构的单粒子瞬态数值仿真研究:物理学报,2024,73(12):288-299
- Gamma-irradiation-accelerated Degradation in Algan-based Uvc Leds Under Electrical Stress:IEEE Transactions on Nuclear Science,2021,68(2):149-155
- 吕玲,Effect of heavy ion irradiation on the interface traps of AlGaN/GaN High Electron Mobility Transistors.[J]:Chinese Physics B,2022,31:036103
- 吕玲,增强型AlGaN/GaN MIS-HEMTs器件的质子辐照效应.[J]:现代应用物理,2021,12(2):020601
- A novel AlGaN/GaN Schottky barrier diode with partial p-AlGaN cap layer and recessed dual-metal anode for high breakdown and low turn-on voltage:Semiconductor Science and Technology,2020,35:015018-9
- Degradation mechanisms of InGaN/GaN UVA LEDs under swift heavy ion irradiation: role of defects:Semiconductor Science and Technology,2021,36(9):095044
- Significant Degradation of AlGaN/GaN High Electron Mobility Transistors with Fast and Thermal Neutron Irradiation.[J]:IEEE Transactions on Nuclear Science,2019
- Fast and Thermal Neutron Radiation Effects on GaN PIN Diodes.[J],2017
- Lv, Ling; Ma, Xiaohua; Xi, He; Liu, Linyue; Cao, Yanrong; Zhang, Jincheng; Shan, Hengsheng; Hao, Yue,Theoretical analysis of proton irradiation effects on AlGaN/GaN high-electron-mobility transistors:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2015,33(5)
- Lv, Ling; Ma, Xiaohua; Zhang, Jincheng; Bi, Zhen; Liu, Linyue; Shan, Hengsheng; Hao, Yue,Proton Irradiation Effects on AlGaN/AlN/GaN Heterojunctions:IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2015,62(1):300-305
- Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors.[J]:Microelectronics Reliability
- Neutron irradiation effects on AlGaN/GaN high electron mobility transistors.[J]:Chinese Physics B
- Proton irradiation effects on HVPE GaN.[J]:Science China - Technological Sciences
- Effects of 3 MeV proton irradiations on AlGaN/GaN high electron mobility transistors.[J]:Acta Physica Sinica
- GaN基高电子迁移率晶体管的质子辐照效应研究.[J]:空间电子技术
- Properties of p-type GaN etched by inductively coupled plasma and their improvement.[J]:Acta Physica Sinica
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