付裕

个人信息:Personal Information

讲师

主要任职:华山准聘副教授/博士后

性别:男

毕业院校:电子科技大学

学位:工学博士学位

在职信息:在岗

所在单位:微电子学院

入职时间:2023-08-28

办公地点:北校区红楼后301室

电子邮箱:

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个人简介:Personal Profile


 付裕,工学博士,华山准聘副教授。电子科技大学与早稻田大学联合培养博士(2022),2023年加入西安电子科技大学微电子学院郝跃院士团队工作,主要从事超宽禁带金刚石半导体材料与器件研究。近年来,研究成果在IEDM、IEEE EDL/TED、Carbon、Applied Physics Letters、ISPSD等微电子领域著名期刊和会议发表高水平论文20余篇,授权发明专利1项。在国内外重要会议做口头报告5次,担任多个期刊审稿人。参研国家自然科学基金项目2项、国家部委重点项目子课题3项。

 

教育与工作经历

2023.08–至今           西安电子科技大学,微电子学院,华山准聘副教授

                                电子科学与技术流动站博士后,师从郝跃院士

2015.09–2022.12     电子科技大学,电子科学与技术学院,博士

                                硕博连读,师从徐锐敏教授

2019.10–2022.11     早稻田大学(日本),川原田研究室,联合培养

                                国家/单位公派,师从Hiroshi Kawarada教授 

2011.09–2015.06     北京信息科技大学,信息与通信工程学院,学士

                                师从马惠敏教授(北京科技大学)

 

主要研究方向

(1)氢终端金刚石微波器件工艺与建模

(2)硅终端金刚石功率器件工艺与机理

(3)金刚石材料与器件的集成创新应用


获奖情况

(1)Functional Diamond期刊“优秀青年科学家”奖(2022)

(2)电子科技大学博士生学术支持计划(2021)

(3)国家留学基金委出国留学奖学金(2019)

(4)中国电子科技集团-电子科技大学奖学金(2018)

 

代表性成果

 

加入西电前:

(1)Yu Fu*, Te Bi, Yuhao Chang, Ruimin Xu, Yuehang Xu, Hiroshi Kawarada., Oxidized-silicon-terminated Diamond p-FETs with SiO2-filling Shallow Trench Isolation Structures[J]. IEEE Electron Device Letters, 2023, 44(11): 1899-1902.

(2)Yu Fu*, Yuhao Chang, Shozo Kono, Atsushi Hiraiwa, Kyotaro Kanehisa, Xiaohua Zhu, Ruimin Xu, Yuehang Xu, Hiroshi Kawarada., −10 V threshold voltage high-performance normally-OFF C–Si diamond MOSFET formed by p+-diamond-first and silicon molecular beam deposition[J]. IEEE Transactions on Electron Devices, 2022, 69(5): 2236-2242. 

(3)Yu Fu*, Yuhao Chang, Xiaohua Zhu, Ruimin Xu, Yuehang Xu, Hiroshi Kawarada., Normally-off oxidized Si-terminated (111) diamond MOSFETs via ALD-Al2O3 gate insulator with drain current density over 300 mA/mm[J]. IEEE Transactions on Electron Devices, 2022, 69(8):4144-4152. 

(4)Yu Fu*, Shozo Kono, Hiroshi Kawarada, Atsushi Hiraiwa., Electrical characterization of metal/Al2O3/SiO2/ oxidized-Si-terminated (C-Si-O) diamond  capacitors  [J]. IEEE Transactions on Electron Devices, 2022, 69(7): 3604-3610. 

(5)Yu Fu*, Xinxin Yu, Jianjun Zhou, Ruimin Xu, Bo Yan, Yuehang Xu., A study of linearity of C-H diamond FETs for S-band power application[J]. IEEE Transactions on Electron Devices, 2021, 68(8): 3950-3955.  

(6)Yu Fu*, Ruimin Xu, Yuehang Xu, Jianjun Zhou, Qingzhi Wu, Yuechan Kong, Yong Zhang, Tangsheng Chen, Bo Yan., Characterization and modeling of hydrogen-terminated MOSFETs with single-crystal and polycrystalline diamond[J]. IEEE  Electron Device Letters, 2018, 39(11): 1704-1707. 

(7)H. Kawarada, K. Ota, Y. Fu*, K. Narita, X. Zhu, A. Hiraiwa, T. Fujishima., Oxidized Silicon Terminated Diamond p-MOSFETs with Channel Mobility >150 cm2V-1s-1 and |VTH|>3V Normally-off for Complementary Power Circuits, 2023 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA.

(8)Yu Fu*, Ruimin Xu, Xinxin Yu, Jianjun Zhou, Yuechan Kong, Tangsheng Chen, Bo Yan, Yanrong Li, Zhengqiang Ma, Yuehang Xu., Enhanced interface properties of diamond MOSFETs with Al2O3 gate dielectric deposited via ALD at a high temperature[J]. Chinese Physics B, 2021, 30(5): 058101. 

(9)Yu Fu*, Ruimin Xu, Jianjun Zhou, Xinxin Yu, Zhang Wen, Yuechan Kong, Tangsheng Chen, Yong Zhang, Bo Yan, Jijun He, Yuehang Xu., A large-signal model for two-dimensional hole gas diamond MOSFET based on the QPZD[J]. IEEE Access, 2019, 7:76868-76877. 

(10)Yu Fu*, Yuhao Chang, Xiaohua Zhu, Atsushi Hiraiwa, Ruimin Xu, Yuehang Xu, Hiroshi Kawarada., 300 mA/mm drain current density P-type enhancement-mode oxidized Si-terminated (111) diamond MOSFETs with ALD Al2O3 gate insulator[C]. 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vancouver, Canada. (本届会议金刚石器件领域唯一收录论文)

(11)Yu Fu*, Yuhao Chang, Shozo Kono, Atsushi Hiraiwa, Hiroshi Kawarada., Oxidized- Si-Terminated (C–Si–O) Diamond MOSFETs with ALD-Al2O3 Gate Insulator[C]. The 2nd International Symposium on Design and Engineering by Joint Inverse Innovation for Materials Architecture (DEJI2MA-2), Osaka, Japan, 2022. (特邀报告)

(12)Yu Fu*, Yuehang Xu,, Ruimin Xu, Jianjun Zhou, Yuechan Kong., Physical-based simulation of DC characteristics of hydrogen-terminated diamond MOSFETs[C]. 2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), Haining. (EI)

(13)Yu Fu*, Ruimin Xu, Bo Yan, Xinxin Yu, Jianjun Zhou, Yuechan Kong, Tangsheng Chen, Yuehang Xu., TCAD simulation and large-signal modeling for two-dimensional hole gas diamond MOSFET[C]. 2019 International meeting of Single Crystal Diamond and Electronic devices (SCDE), Xi'an.


  • 教育经历Education Background
  • 工作经历Work Experience
  • 研究方向Research Focus
  • 社会兼职Social Affiliations