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Title:一种漏端复合SBD结构的MOS抗辐照器件及制备方法

Institution:微电子学院

First Author:包军林

Type of Patent:发明

Application Number:CN202211197397.9

Authorization Number:CN202211197397.9

Service Invention or Not:No

Authorization Date:2022-09-29

Date:2024-06-12